Show Hamamatsu Avalanche Photo Diode 2017022612
This is all the information about APD 2017022612. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2017022612 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B04 |
| Break-through voltage: |
399 V |
| Voltage for Gain 100 (T=+25°C): |
370.8 V |
| Dark current: |
10.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
371 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10566 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 371.1595178 V T = -25 °C: 337.4725475 V |
| Voltage for Gain 150: |
T = +20 °C: 378.7554104 V T = -25 °C: 344.488221 V |
| Voltage for Gain 200: |
T = +20 °C: 383.019001 V T = -25 °C: 348.4784258 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.69397821 V-1 T = -25 °C: 5.285730399 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.281770196 V-1 T = -25 °C: 9.346651853 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.53492435 V-1 T = -25 °C: 17.12645438 V-1 |
| Break-through voltage: |
T = +20 °C: 398.4032039 V T = -25 °C: 363.5045646 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
