Show Hamamatsu Avalanche Photo Diode 1314014599
This is all the information about APD 1314014599. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1314014599 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
417.6 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10205 |
| |
|
| Shipment: |
|
| Grid number: |
335 |
| Position in grid: |
4 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
29. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.6697167 V T = -25 °C: 381.9513758 V |
| Voltage for Gain 150: |
T = +20 °C: 426.6061227 V T = -25 °C: 389.7815505 V |
| Voltage for Gain 200: |
T = +20 °C: 430.9856374 V T = -25 °C: 394.1147342 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.315375195 V-1 T = -25 °C: 4.593594421 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.306188985 V-1 T = -25 °C: 9.205997735 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.49731951 V-1 T = -25 °C: 14.54628426 V-1 |
| Break-through voltage: |
T = +20 °C: 438.562447 V T = -25 °C: 408.0280561 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
