Show Hamamatsu Avalanche Photo Diode 1314014592
This is all the information about APD 1314014592. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1314014592 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
450 V |
| Voltage for Gain 100 (T=+25°C): |
422 V |
| Dark current: |
9.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
326 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10692 |
| |
|
| Shipment: |
|
| Grid number: |
334 |
| Position in grid: |
18 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 422.9997732 V T = -25 °C: 386.4128964 V |
| Voltage for Gain 150: |
T = +20 °C: 430.9203057 V T = -25 °C: 394.260431 V |
| Voltage for Gain 200: |
T = +20 °C: 435.3183936 V T = -25 °C: 398.606948 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.524945152 V-1 T = -25 °C: 4.43616378 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.864830326 V-1 T = -25 °C: 8.689014274 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47525717 V-1 T = -25 °C: 15.02761708 V-1 |
| Break-through voltage: |
T = +20 °C: 444.9526871 V T = -25 °C: 413.7871921 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
