Show Hamamatsu Avalanche Photo Diode 1314014577
This is all the information about APD 1314014577. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1314014577 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.7 V |
| Dark current: |
5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
326 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10692 |
| |
|
| Shipment: |
|
| Grid number: |
334 |
| Position in grid: |
4 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.4404048 V T = -25 °C: 379.6760089 V |
| Voltage for Gain 150: |
T = +20 °C: 424.4059306 V T = -25 °C: 387.6266778 V |
| Voltage for Gain 200: |
T = +20 °C: 428.8207686 V T = -25 °C: 392.0130516 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.400534558 V-1 T = -25 °C: 4.340665617 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.635981603 V-1 T = -25 °C: 8.458383945 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.07524597 V-1 T = -25 °C: 14.73372584 V-1 |
| Break-through voltage: |
T = +20 °C: 443.011301 V T = -25 °C: 406.9422532 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
