Show Hamamatsu Avalanche Photo Diode 1314014573
This is all the information about APD 1314014573. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1314014573 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
417.7 V |
| Dark current: |
8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
326 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10692 |
| |
|
| Shipment: |
|
| Grid number: |
334 |
| Position in grid: |
1 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.4082013 V T = -25 °C: 381.5938462 V |
| Voltage for Gain 150: |
T = +20 °C: 426.358517 V T = -25 °C: 389.5043716 V |
| Voltage for Gain 200: |
T = +20 °C: 430.7594281 V T = -25 °C: 393.8718441 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.39199809 V-1 T = -25 °C: 4.34736913 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.536677297 V-1 T = -25 °C: 8.465153536 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.77509217 V-1 T = -25 °C: 14.63615763 V-1 |
| Break-through voltage: |
T = +20 °C: 444.9241775 V T = -25 °C: 409.2037441 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
