Show Hamamatsu Avalanche Photo Diode 1314014544
This is all the information about APD 1314014544. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1314014544 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D13 |
Break-through voltage: |
450 V |
Voltage for Gain 100 (T=+25°C): |
421.7 V |
Dark current: |
6.4 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
16 |
EP1 batch: |
202 |
EP1 batch after irradiation: |
10434 |
|
|
Shipment: |
|
Grid number: |
332 |
Position in grid: |
15 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 422.1721939 V T = -25 °C: 385.5724286 V |
Voltage for Gain 150: |
T = +20 °C: 430.0602892 V T = -25 °C: 393.3683421 V |
Voltage for Gain 200: |
T = +20 °C: 434.4375416 V T = -25 °C: 397.6896812 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.52181259 V-1 T = -25 °C: 4.437298822 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.93168914 V-1 T = -25 °C: 8.765273448 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88997273 V-1 T = -25 °C: 15.37715743 V-1 |
Break-through voltage: |
T = +20 °C: 439.9971021 V T = -25 °C: 413.619159 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history