Show Hamamatsu Avalanche Photo Diode 1314014542
This is all the information about APD 1314014542. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1314014542 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D03 |
Break-through voltage: |
447 V |
Voltage for Gain 100 (T=+25°C): |
418.7 V |
Dark current: |
10.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
14 |
EP1 batch: |
201 |
EP1 batch after irradiation: |
10433 |
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Shipment: |
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Grid number: |
332 |
Position in grid: |
13 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 419.0618539 V T = -25 °C: 382.1292216 V |
Voltage for Gain 150: |
T = +20 °C: 427.0530055 V T = -25 °C: 390.0531504 V |
Voltage for Gain 200: |
T = +20 °C: 431.5084793 V T = -25 °C: 394.4842392 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.484192881 V-1 T = -25 °C: 4.523388428 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.822381197 V-1 T = -25 °C: 8.906645543 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.3401539 V-1 T = -25 °C: 13.74977292 V-1 |
Break-through voltage: |
T = +20 °C: 439.9956487 V T = -25 °C: 410.158271 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history