Show Hamamatsu Avalanche Photo Diode 1314014539
This is all the information about APD 1314014539. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1314014539 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C13 |
Break-through voltage: |
451 V |
Voltage for Gain 100 (T=+25°C): |
422.3 V |
Dark current: |
8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
12 |
EP1 batch: |
201 |
EP1 batch after irradiation: |
10433 |
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Shipment: |
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Grid number: |
332 |
Position in grid: |
11 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 423.0475358 V T = -25 °C: 386.0627222 V |
Voltage for Gain 150: |
T = +20 °C: 430.9269152 V T = -25 °C: 393.9991317 V |
Voltage for Gain 200: |
T = +20 °C: 435.3186657 V T = -25 °C: 398.4302134 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.58262371 V-1 T = -25 °C: 4.546425869 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.000830554 V-1 T = -25 °C: 8.952619087 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.95491579 V-1 T = -25 °C: 13.58735456 V-1 |
Break-through voltage: |
T = +20 °C: 440.0196726 V T = -25 °C: 414.3075805 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history