Show Hamamatsu Avalanche Photo Diode 1313014521
This is all the information about APD 1313014521. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1313014521 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D05 |
Break-through voltage: |
441 V |
Voltage for Gain 100 (T=+25°C): |
412.2 V |
Dark current: |
7.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
291 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10205 |
|
|
Shipment: |
|
Grid number: |
331 |
Position in grid: |
17 |
Arrival for irradiation: |
11. Aug 2016 |
Sent for analysis after irradiation: |
02. Sep 2016 |
Return for assembly: |
06. Oct 2016 |
|
|
Irradiation: |
|
Date: |
23. Aug 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
2 |
Bias voltage: |
350 V (connected) |
|
|
Annealing: |
|
Date: |
24. Aug 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 412.6502165 V T = -25 °C: 375.5749006 V |
Voltage for Gain 150: |
T = +20 °C: 420.6678662 V T = -25 °C: 383.5124639 V |
Voltage for Gain 200: |
T = +20 °C: 425.101586 V T = -25 °C: 387.9022801 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.300787814 V-1 T = -25 °C: 4.354563049 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.101407309 V-1 T = -25 °C: 8.443665781 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.07588997 V-1 T = -25 °C: 14.55610043 V-1 |
Break-through voltage: |
T = +20 °C: 439.9416688 V T = -25 °C: 403.6450083 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history