Show Hamamatsu Avalanche Photo Diode 1313014487
This is all the information about APD 1313014487. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1313014487 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
438 V |
| Voltage for Gain 100 (T=+25°C): |
409.9 V |
| Dark current: |
9.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
251 |
| Position in Box: |
3 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10484 |
| |
|
| Shipment: |
|
| Grid number: |
330 |
| Position in grid: |
13 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 430.0126087 V T = -25 °C: 371.7165601 V |
| Voltage for Gain 150: |
T = +20 °C: 432.7480848 V T = -25 °C: 373.5858893 V |
| Voltage for Gain 200: |
T = +20 °C: 434.2412672 V T = -25 °C: 376.1828041 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 13.54003972 V-1 T = -25 °C: 11.0223071 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 26.64876302 V-1 T = -25 °C: 21.78021215 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 42.88973272 V-1 T = -25 °C: 32.03971552 V-1 |
| Break-through voltage: |
T = +20 °C: 433.6203712 V T = -25 °C: 401.1662497 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
