Show Hamamatsu Avalanche Photo Diode 1313014482
This is all the information about APD 1313014482. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1313014482 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E09 |
Break-through voltage: |
437 V |
Voltage for Gain 100 (T=+25°C): |
408.3 V |
Dark current: |
8.3 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
374 |
Position in Box: |
37 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10572 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 410.5902259 V T = -25 °C: 372.0295845 V |
Voltage for Gain 150: |
T = +20 °C: 418.5405504 V T = -25 °C: 379.9093226 V |
Voltage for Gain 200: |
T = +20 °C: 422.9096813 V T = -25 °C: 384.2706293 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.493888423 V-1 T = -25 °C: 4.722425112 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.564712495 V-1 T = -25 °C: 9.040607565 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 16.22610437 V-1 T = -25 °C: 13.92876011 V-1 |
Break-through voltage: |
T = +20 °C: 438.616453 V T = -25 °C: 399.9481647 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history