Show Hamamatsu Avalanche Photo Diode 1311014386
This is all the information about APD 1311014386. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1311014386 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H08 |
Break-through voltage: |
433 V |
Voltage for Gain 100 (T=+25°C): |
407.9 V |
Dark current: |
8.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
323 |
Position in Box: |
25 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10508 |
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Shipment: |
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Grid number: |
326 |
Position in grid: |
8 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 409.0156531 V T = -25 °C: 372.3996784 V |
Voltage for Gain 150: |
T = +20 °C: 417.0747438 V T = -25 °C: 380.2654197 V |
Voltage for Gain 200: |
T = +20 °C: 420.9125003 V T = -25 °C: 384.6338252 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550514375 V-1 T = -25 °C: 4.460446985 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 6.958743978 V-1 T = -25 °C: 8.727852517 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 114.2372482 V-1 T = -25 °C: 15.21513726 V-1 |
Break-through voltage: |
T = +20 °C: 421.5353336 V T = -25 °C: 397.5889307 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history