Show Hamamatsu Avalanche Photo Diode 1311014376
This is all the information about APD 1311014376. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1311014376 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
437 V |
| Voltage for Gain 100 (T=+25°C): |
409.5 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
357 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10542 |
| |
|
| Shipment: |
|
| Grid number: |
325 |
| Position in grid: |
18 |
| Arrival for irradiation: |
19. Sep 2016 |
| Sent for analysis after irradiation: |
30. Sep 2016 |
| Return for assembly: |
02. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2016 |
| Dose used: |
36 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 409.6428808 V T = -25 °C: 373.3472423 V |
| Voltage for Gain 150: |
T = +20 °C: 417.6925527 V T = -25 °C: 381.229513 V |
| Voltage for Gain 200: |
T = +20 °C: 422.1522097 V T = -25 °C: 385.6206982 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.302984995 V-1 T = -25 °C: 4.440012971 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.037490381 V-1 T = -25 °C: 8.731816611 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.01985226 V-1 T = -25 °C: 15.23531135 V-1 |
| Break-through voltage: |
T = +20 °C: 433.197269 V T = -25 °C: 401.4705099 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
