Show Hamamatsu Avalanche Photo Diode 1311014375
This is all the information about APD 1311014375. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1311014375 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
436 V |
| Voltage for Gain 100 (T=+25°C): |
407.4 V |
| Dark current: |
6.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
357 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10542 |
| |
|
| Shipment: |
|
| Grid number: |
325 |
| Position in grid: |
17 |
| Arrival for irradiation: |
19. Sep 2016 |
| Sent for analysis after irradiation: |
30. Sep 2016 |
| Return for assembly: |
02. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2016 |
| Dose used: |
36 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.6585787 V T = -25 °C: 371.5526552 V |
| Voltage for Gain 150: |
T = +20 °C: 416.6508414 V T = -25 °C: 379.5111577 V |
| Voltage for Gain 200: |
T = +20 °C: 421.0746987 V T = -25 °C: 383.9129381 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.604944605 V-1 T = -25 °C: 4.344793958 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.072419706 V-1 T = -25 °C: 9.24695022 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08926757 V-1 T = -25 °C: 14.38738285 V-1 |
| Break-through voltage: |
T = +20 °C: 436.1635651 V T = -25 °C: 399.2084385 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
