Show Hamamatsu Avalanche Photo Diode 1310014282
This is all the information about APD 1310014282. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014282 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B04 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
410 V |
| Dark current: |
10.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
323 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10767 |
| |
|
| Shipment: |
|
| Grid number: |
321 |
| Position in grid: |
18 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.8575827 V T = -25 °C: 374.1805388 V |
| Voltage for Gain 150: |
T = +20 °C: 418.7474361 V T = -25 °C: 382.0165772 V |
| Voltage for Gain 200: |
T = +20 °C: 423.1185982 V T = -25 °C: 386.3811769 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.621240746 V-1 T = -25 °C: 4.550950578 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.20237219 V-1 T = -25 °C: 8.990857587 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35392466 V-1 T = -25 °C: 13.94519123 V-1 |
| Break-through voltage: |
T = +20 °C: 436.745356 V T = -25 °C: 402.174858 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
