Show Hamamatsu Avalanche Photo Diode 1310014279
This is all the information about APD 1310014279. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014279 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
412.3 V |
| Dark current: |
10 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
323 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10766 |
| |
|
| Shipment: |
|
| Grid number: |
321 |
| Position in grid: |
16 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 413.4109385 V T = -25 °C: 376.9770575 V |
| Voltage for Gain 150: |
T = +20 °C: 421.3002628 V T = -25 °C: 384.8238603 V |
| Voltage for Gain 200: |
T = +20 °C: 425.670626 V T = -25 °C: 389.1797949 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.441370872 V-1 T = -25 °C: 4.636623658 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.700899774 V-1 T = -25 °C: 9.200624124 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.23405007 V-1 T = -25 °C: 14.35341046 V-1 |
| Break-through voltage: |
T = +20 °C: 440.6300859 V T = -25 °C: 404.5098487 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
