Show Hamamatsu Avalanche Photo Diode 1310014255
This is all the information about APD 1310014255. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1310014255 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.5 V |
| Dark current: |
9.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10205 |
| |
|
| Shipment: |
|
| Grid number: |
320 |
| Position in grid: |
12 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
29. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.1187707 V T = -25 °C: 370.3966756 V |
| Voltage for Gain 150: |
T = +20 °C: 415.0482734 V T = -25 °C: 378.2607152 V |
| Voltage for Gain 200: |
T = +20 °C: 419.8790654 V T = -25 °C: 382.632528 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.503039855 V-1 T = -25 °C: 4.475304946 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.87863729 V-1 T = -25 °C: 8.722945004 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.097326 V-1 T = -25 °C: 15.25421776 V-1 |
| Break-through voltage: |
T = +20 °C: 423.2139327 V T = -25 °C: 398.0456638 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
