Show Hamamatsu Avalanche Photo Diode 1309014228
This is all the information about APD 1309014228. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1309014228 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
unknown |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C14 |
Break-through voltage: |
444 V |
Voltage for Gain 100 (T=+25°C): |
416.1 V |
Dark current: |
11.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
none |
Position in Box: |
none |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
|
|
Shipment: |
|
Grid number: |
319 |
Position in grid: |
5 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
|
|
Irradiation: |
|
Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
350 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 416.7456902 V T = -25 °C: 379.9863339 V |
Voltage for Gain 150: |
T = +20 °C: 424.6401964 V T = -25 °C: 387.8558068 V |
Voltage for Gain 200: |
T = +20 °C: 429.01552 V T = -25 °C: 392.2486273 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.652546759 V-1 T = -25 °C: 4.599444285 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.264136159 V-1 T = -25 °C: 9.043483459 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.39031615 V-1 T = -25 °C: 13.94606548 V-1 |
Break-through voltage: |
T = +20 °C: 439.9727418 V T = -25 °C: 407.9942662 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history