Show Hamamatsu Avalanche Photo Diode 1309014226
This is all the information about APD 1309014226. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1309014226 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C12 |
Break-through voltage: |
444 V |
Voltage for Gain 100 (T=+25°C): |
415.8 V |
Dark current: |
9.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
359 |
Position in Box: |
46 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10550 |
|
|
Shipment: |
|
Grid number: |
319 |
Position in grid: |
3 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
|
|
Irradiation: |
|
Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
350 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 416.7145649 V T = -25 °C: 380.3789925 V |
Voltage for Gain 150: |
T = +20 °C: 424.6280628 V T = -25 °C: 388.1931203 V |
Voltage for Gain 200: |
T = +20 °C: 429.0153272 V T = -25 °C: 392.5264124 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.638670797 V-1 T = -25 °C: 4.471823732 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.219284876 V-1 T = -25 °C: 8.822016589 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35008725 V-1 T = -25 °C: 15.37792531 V-1 |
Break-through voltage: |
T = +20 °C: 437.8461681 V T = -25 °C: 407.7143901 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history