Show Hamamatsu Avalanche Photo Diode 1309014211
This is all the information about APD 1309014211. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1309014211 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D05 |
Break-through voltage: |
438 V |
Voltage for Gain 100 (T=+25°C): |
409.1 V |
Dark current: |
11 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
291 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10204 |
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Shipment: |
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Grid number: |
318 |
Position in grid: |
10 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
409.1 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 409.3804713 V T = -25 °C: 372.5874374 V |
Voltage for Gain 150: |
T = +20 °C: 417.4049314 V T = -25 °C: 380.5065127 V |
Voltage for Gain 200: |
T = +20 °C: 421.850127 V T = -25 °C: 384.8977588 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.365575738 V-1 T = -25 °C: 4.349791945 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.438309683 V-1 T = -25 °C: 8.433518444 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.48431911 V-1 T = -25 °C: 14.53458599 V-1 |
Break-through voltage: |
T = +20 °C: 437.592493 V T = -25 °C: 400.7386525 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history