Show Hamamatsu Avalanche Photo Diode 1309014208
This is all the information about APD 1309014208. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1309014208 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
412.1 V |
| Dark current: |
9.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
291 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10204 |
| |
|
| Shipment: |
|
| Grid number: |
318 |
| Position in grid: |
7 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
412.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.7765591 V T = -25 °C: 377.2599233 V |
| Voltage for Gain 150: |
T = +20 °C: 420.7496588 V T = -25 °C: 384.7978547 V |
| Voltage for Gain 200: |
T = +20 °C: 425.1743473 V T = -25 °C: 389.2459321 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.600775788 V-1 T = -25 °C: 4.545194252 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.07301283 V-1 T = -25 °C: 8.851263253 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.99872275 V-1 T = -25 °C: 14.80373917 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9098489 V T = -25 °C: 404.5558753 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
