Show Hamamatsu Avalanche Photo Diode 1309014205
This is all the information about APD 1309014205. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1309014205 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A10 |
Break-through voltage: |
443 V |
Voltage for Gain 100 (T=+25°C): |
415.8 V |
Dark current: |
8.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
291 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10204 |
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Shipment: |
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Grid number: |
318 |
Position in grid: |
4 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
415.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 415.6672459 V T = -25 °C: 379.1107089 V |
Voltage for Gain 150: |
T = +20 °C: 423.6311247 V T = -25 °C: 387.0158145 V |
Voltage for Gain 200: |
T = +20 °C: 428.0587385 V T = -25 °C: 391.4118673 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.620192854 V-1 T = -25 °C: 4.490763782 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.072406847 V-1 T = -25 °C: 8.764655552 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97000817 V-1 T = -25 °C: 15.30300341 V-1 |
Break-through voltage: |
T = +20 °C: 438.2838083 V T = -25 °C: 406.5982169 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history