Show Hamamatsu Avalanche Photo Diode 1309014198
This is all the information about APD 1309014198. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1309014198 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D01 |
Break-through voltage: |
439.5 V |
Voltage for Gain 100 (T=+25°C): |
412 V |
Dark current: |
8.13 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
43 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10070 |
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Shipment: |
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Grid number: |
317 |
Position in grid: |
17 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 412.188616 V T = -25 °C: 375.3242648 V |
Voltage for Gain 150: |
T = +20 °C: 420.2613251 V T = -25 °C: 383.3141247 V |
Voltage for Gain 200: |
T = +20 °C: 424.7560026 V T = -25 °C: 387.7804389 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.30246751 V-1 T = -25 °C: 4.613057492 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.83422679 V-1 T = -25 °C: 8.874655642 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98375099 V-1 T = -25 °C: 14.94406555 V-1 |
Break-through voltage: |
T = +20 °C: 439.175826 V T = -25 °C: 403.1248014 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history