Show Hamamatsu Avalanche Photo Diode 1308014137
This is all the information about APD 1308014137. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1308014137 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C15 |
Break-through voltage: |
445.8 V |
Voltage for Gain 100 (T=+25°C): |
417.9 V |
Dark current: |
11.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
290 |
Position in Box: |
11 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10202 |
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Shipment: |
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Grid number: |
315 |
Position in grid: |
1 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 418.0483829 V T = -25 °C: 380.4735117 V |
Voltage for Gain 150: |
T = +20 °C: 426.067465 V T = -25 °C: 388.5508491 V |
Voltage for Gain 200: |
T = +20 °C: 430.5225947 V T = -25 °C: 393.0517945 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.455459634 V-1 T = -25 °C: 4.478558576 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.40875327 V-1 T = -25 °C: 8.499740412 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.29461836 V-1 T = -25 °C: 13.43737731 V-1 |
Break-through voltage: |
T = +20 °C: 439.8438948 V T = -25 °C: 409.1915724 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history