Show Hamamatsu Avalanche Photo Diode 1308014122
This is all the information about APD 1308014122. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1308014122 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
434.3 V |
| Voltage for Gain 100 (T=+25°C): |
409.4 V |
| Dark current: |
10.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
43 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10070 |
| |
|
| Shipment: |
|
| Grid number: |
314 |
| Position in grid: |
7 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.0748372 V T = -25 °C: 373.398905 V |
| Voltage for Gain 150: |
T = +20 °C: 418.092217 V T = -25 °C: 381.3340902 V |
| Voltage for Gain 200: |
T = +20 °C: 422.5364641 V T = -25 °C: 385.7621935 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.383596948 V-1 T = -25 °C: 4.633732752 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.127761217 V-1 T = -25 °C: 8.947775322 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.86829473 V-1 T = -25 °C: 15.23669393 V-1 |
| Break-through voltage: |
T = +20 °C: 431.2881027 V T = -25 °C: 400.1099384 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
