Show Hamamatsu Avalanche Photo Diode 1308014096
This is all the information about APD 1308014096. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1308014096 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D01 |
Break-through voltage: |
429.6 V |
Voltage for Gain 100 (T=+25°C): |
402.3 V |
Dark current: |
4.74 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
290 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10203 |
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Shipment: |
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Grid number: |
313 |
Position in grid: |
5 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 402.6700386 V T = -25 °C: 365.9853278 V |
Voltage for Gain 150: |
T = +20 °C: 410.7131582 V T = -25 °C: 373.9181075 V |
Voltage for Gain 200: |
T = +20 °C: 415.1676676 V T = -25 °C: 378.3295697 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.281144334 V-1 T = -25 °C: 4.55238776 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.045348501 V-1 T = -25 °C: 8.967720553 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.98194018 V-1 T = -25 °C: 13.86094721 V-1 |
Break-through voltage: |
T = +20 °C: 429.6350782 V T = -25 °C: 392.9341141 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history