Show Hamamatsu Avalanche Photo Diode 1308014095
This is all the information about APD 1308014095. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1308014095 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E14 |
| Break-through voltage: |
444.9 V |
| Voltage for Gain 100 (T=+25°C): |
416.5 V |
| Dark current: |
8.42 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
356 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10541 |
| |
|
| Shipment: |
|
| Grid number: |
313 |
| Position in grid: |
4 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.8619233 V T = -25 °C: 380.0396677 V |
| Voltage for Gain 150: |
T = +20 °C: 424.8227512 V T = -25 °C: 387.9758345 V |
| Voltage for Gain 200: |
T = +20 °C: 429.2658754 V T = -25 °C: 392.3953766 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.584016069 V-1 T = -25 °C: 4.548059748 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.987307336 V-1 T = -25 °C: 8.911830691 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.87300339 V-1 T = -25 °C: 13.79853143 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9882 V T = -25 °C: 408.3057681 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
