Show Hamamatsu Avalanche Photo Diode 1307014074
This is all the information about APD 1307014074. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1307014074 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
444.5 V |
Voltage for Gain 100 (T=+25°C): |
416.7 V |
Dark current: |
8.53 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
45 |
Position in Box: |
19 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10073 |
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Shipment: |
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Grid number: |
312 |
Position in grid: |
8 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 417.9502936 V T = -25 °C: 381.3474034 V |
Voltage for Gain 150: |
T = +20 °C: 425.9369171 V T = -25 °C: 389.2758284 V |
Voltage for Gain 200: |
T = +20 °C: 430.3587805 V T = -25 °C: 393.6322654 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 3.929120744 V-1 T = -25 °C: 4.275077674 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.173543088 V-1 T = -25 °C: 9.129715269 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 16.79435686 V-1 T = -25 °C: 14.90845891 V-1 |
Break-through voltage: |
T = +20 °C: 439.9906435 V T = -25 °C: 408.213415 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history