Show Hamamatsu Avalanche Photo Diode 1307014070
This is all the information about APD 1307014070. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1307014070 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D15 |
Break-through voltage: |
436.5 V |
Voltage for Gain 100 (T=+25°C): |
411.6 V |
Dark current: |
11.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
45 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10073 |
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Shipment: |
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Grid number: |
312 |
Position in grid: |
4 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 411.4673729 V T = -25 °C: 374.8521227 V |
Voltage for Gain 150: |
T = +20 °C: 419.3796237 V T = -25 °C: 382.6203669 V |
Voltage for Gain 200: |
T = +20 °C: 423.723711 V T = -25 °C: 386.9287143 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.366927156 V-1 T = -25 °C: 4.669636223 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.46397259 V-1 T = -25 °C: 9.404525771 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.56087017 V-1 T = -25 °C: 13.78517578 V-1 |
Break-through voltage: |
T = +20 °C: 435.7372725 V T = -25 °C: 400.1563838 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history