Show Hamamatsu Avalanche Photo Diode 1307014069
This is all the information about APD 1307014069. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1307014069 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C12 |
Break-through voltage: |
444.8 V |
Voltage for Gain 100 (T=+25°C): |
416.9 V |
Dark current: |
9.29 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
356 |
Position in Box: |
9 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10541 |
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Shipment: |
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Grid number: |
312 |
Position in grid: |
3 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 417.7060987 V T = -25 °C: 381.13368 V |
Voltage for Gain 150: |
T = +20 °C: 425.5689027 V T = -25 °C: 388.956146 V |
Voltage for Gain 200: |
T = +20 °C: 429.9301604 V T = -25 °C: 393.2842274 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.380416055 V-1 T = -25 °C: 4.557650859 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.508455275 V-1 T = -25 °C: 9.117966563 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.78582857 V-1 T = -25 °C: 14.30442653 V-1 |
Break-through voltage: |
T = +20 °C: 439.9761199 V T = -25 °C: 408.4433756 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history