Show Hamamatsu Avalanche Photo Diode 1307014055
This is all the information about APD 1307014055. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1307014055 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F05 |
Break-through voltage: |
438.4 V |
Voltage for Gain 100 (T=+25°C): |
410.1 V |
Dark current: |
6.51 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
293 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10207 |
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Shipment: |
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Grid number: |
311 |
Position in grid: |
11 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
29. Nov 2016 |
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Irradiation: |
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Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
350 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 410.7646132 V T = -25 °C: 373.9081268 V |
Voltage for Gain 150: |
T = +20 °C: 418.7186277 V T = -25 °C: 381.9211876 V |
Voltage for Gain 200: |
T = +20 °C: 423.1274692 V T = -25 °C: 386.0743993 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.604689477 V-1 T = -25 °C: 4.498911941 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.093187283 V-1 T = -25 °C: 9.07383784 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.15138093 V-1 T = -25 °C: 13.2705775 V-1 |
Break-through voltage: |
T = +20 °C: 438.917219 V T = -25 °C: 402.217006 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history