Show Hamamatsu Avalanche Photo Diode 1306013959
This is all the information about APD 1306013959. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1306013959 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H09 |
Break-through voltage: |
433.7 V |
Voltage for Gain 100 (T=+25°C): |
406.1 V |
Dark current: |
9.84 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
290 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10202 |
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Shipment: |
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Grid number: |
306 |
Position in grid: |
18 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
20. Dec 2016 |
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Irradiation: |
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Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 407.0571934 V T = -25 °C: 369.6751966 V |
Voltage for Gain 150: |
T = +20 °C: 415.1003759 V T = -25 °C: 377.7823035 V |
Voltage for Gain 200: |
T = +20 °C: 419.5570433 V T = -25 °C: 382.2811954 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.417239119 V-1 T = -25 °C: 4.394142588 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.348873501 V-1 T = -25 °C: 8.22153266 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21326931 V-1 T = -25 °C: 14.90092546 V-1 |
Break-through voltage: |
T = +20 °C: 430.4304136 V T = -25 °C: 397.3728972 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history