Show Hamamatsu Avalanche Photo Diode 1306013949
This is all the information about APD 1306013949. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1306013949 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
432.3 V |
| Voltage for Gain 100 (T=+25°C): |
404.4 V |
| Dark current: |
7.88 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
290 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10202 |
| |
|
| Shipment: |
|
| Grid number: |
306 |
| Position in grid: |
19 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
20. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 404.736048 V T = -25 °C: 367.6216093 V |
| Voltage for Gain 150: |
T = +20 °C: 412.6951798 V T = -25 °C: 375.5448163 V |
| Voltage for Gain 200: |
T = +20 °C: 417.1053681 V T = -25 °C: 379.9608438 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.521917607 V-1 T = -25 °C: 4.45252825 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.639807594 V-1 T = -25 °C: 8.398573386 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.91458396 V-1 T = -25 °C: 15.39252428 V-1 |
| Break-through voltage: |
T = +20 °C: 432.5619771 V T = -25 °C: 395.9999812 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
