Show Hamamatsu Avalanche Photo Diode 1305013866
This is all the information about APD 1305013866. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1305013866 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
B07 |
Break-through voltage: |
445.9 V |
Voltage for Gain 100 (T=+25°C): |
418.1 V |
Dark current: |
8.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
293 |
Position in Box: |
18 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10207 |
|
|
Shipment: |
|
Grid number: |
301 |
Position in grid: |
17 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
29. Nov 2016 |
|
|
Irradiation: |
|
Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (not connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 419.4838384 V T = -25 °C: 382.7714619 V |
Voltage for Gain 150: |
T = +20 °C: 427.3791457 V T = -25 °C: 390.6166721 V |
Voltage for Gain 200: |
T = +20 °C: 431.7423028 V T = -25 °C: 394.9764731 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.405733729 V-1 T = -25 °C: 4.665853923 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.605304751 V-1 T = -25 °C: 9.305740308 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00777895 V-1 T = -25 °C: 14.6046727 V-1 |
Break-through voltage: |
T = +20 °C: 439.9802289 V T = -25 °C: 409.8803543 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history