Show Hamamatsu Avalanche Photo Diode 1305013864
This is all the information about APD 1305013864. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1305013864 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G06 |
Break-through voltage: |
439.4 V |
Voltage for Gain 100 (T=+25°C): |
411 V |
Dark current: |
7.89 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
290 |
Position in Box: |
45 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10203 |
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Shipment: |
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Grid number: |
301 |
Position in grid: |
15 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
29. Nov 2016 |
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Irradiation: |
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Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 411.3848819 V T = -25 °C: 374.9115635 V |
Voltage for Gain 150: |
T = +20 °C: 419.3348119 V T = -25 °C: 382.7508257 V |
Voltage for Gain 200: |
T = +20 °C: 423.7475211 V T = -25 °C: 387.0930255 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.441991886 V-1 T = -25 °C: 4.653655587 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.601197435 V-1 T = -25 °C: 9.231431951 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.91301148 V-1 T = -25 °C: 14.44283321 V-1 |
Break-through voltage: |
T = +20 °C: 438.0756848 V T = -25 °C: 403.0919966 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history