Show Hamamatsu Avalanche Photo Diode 1305013858
This is all the information about APD 1305013858. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1305013858 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F11 |
Break-through voltage: |
443.1 V |
Voltage for Gain 100 (T=+25°C): |
415.3 V |
Dark current: |
8.93 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
357 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10543 |
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Shipment: |
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Grid number: |
301 |
Position in grid: |
10 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
29. Nov 2016 |
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Irradiation: |
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Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (not connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 415.7524018 V T = -25 °C: 378.9717233 V |
Voltage for Gain 150: |
T = +20 °C: 423.6182607 V T = -25 °C: 386.80354 V |
Voltage for Gain 200: |
T = +20 °C: 427.9804706 V T = -25 °C: 391.1862487 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.667193427 V-1 T = -25 °C: 4.602963243 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.220100068 V-1 T = -25 °C: 8.995217194 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.376687 V-1 T = -25 °C: 13.96882335 V-1 |
Break-through voltage: |
T = +20 °C: 439.9523896 V T = -25 °C: 406.8806839 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history