Show Hamamatsu Avalanche Photo Diode 1305013845
This is all the information about APD 1305013845. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1305013845 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A08 |
Break-through voltage: |
449.2 V |
Voltage for Gain 100 (T=+25°C): |
421 V |
Dark current: |
7.38 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
48 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10653 |
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Shipment: |
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Grid number: |
300 |
Position in grid: |
17 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
421 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 421.2546993 V T = -25 °C: 384.6759551 V |
Voltage for Gain 150: |
T = +20 °C: 429.1826723 V T = -25 °C: 392.5188333 V |
Voltage for Gain 200: |
T = +20 °C: 433.5857107 V T = -25 °C: 396.8677668 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.494437805 V-1 T = -25 °C: 4.395562414 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.757629632 V-1 T = -25 °C: 8.60710852 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30636265 V-1 T = -25 °C: 14.94800359 V-1 |
Break-through voltage: |
T = +20 °C: 440.0100627 V T = -25 °C: 412.8048198 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history