Show Hamamatsu Avalanche Photo Diode 1304013837
This is all the information about APD 1304013837. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1304013837 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G11 |
Break-through voltage: |
443.6 V |
Voltage for Gain 100 (T=+25°C): |
415.5 V |
Dark current: |
10.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
42 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10653 |
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Shipment: |
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Grid number: |
300 |
Position in grid: |
10 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
415.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 415.7236952 V T = -25 °C: 379.4821779 V |
Voltage for Gain 150: |
T = +20 °C: 423.636961 V T = -25 °C: 387.2801133 V |
Voltage for Gain 200: |
T = +20 °C: 428.0213677 V T = -25 °C: 391.622585 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.37248797 V-1 T = -25 °C: 4.496460892 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.49738868 V-1 T = -25 °C: 8.88422244 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.80077005 V-1 T = -25 °C: 15.76246905 V-1 |
Break-through voltage: |
T = +20 °C: 434.7993519 V T = -25 °C: 407.3776288 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history