Show Hamamatsu Avalanche Photo Diode 1304013781
This is all the information about APD 1304013781. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1304013781 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Giessen (mounted in Slice) |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
443 V |
| Voltage for Gain 100 (T=+25°C): |
414.5 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
293 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
298 |
| Position in grid: |
17 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.1412758 V T = -25 °C: 378.8252476 V |
| Voltage for Gain 150: |
T = +20 °C: 424.1266927 V T = -25 °C: 386.7808347 V |
| Voltage for Gain 200: |
T = +20 °C: 428.5631148 V T = -25 °C: 391.2009152 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.461565208 V-1 T = -25 °C: 4.603087864 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.676315695 V-1 T = -25 °C: 9.045929718 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.15238637 V-1 T = -25 °C: 13.97630047 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9448639 V T = -25 °C: 406.3487992 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
