Show Hamamatsu Avalanche Photo Diode 1303013750
This is all the information about APD 1303013750. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1303013750 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
434 V |
| Voltage for Gain 100 (T=+25°C): |
405.4 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
335 |
| Position in Box: |
3 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10502 |
| |
|
| Shipment: |
|
| Grid number: |
296 |
| Position in grid: |
14 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 405.6213965 V T = -25 °C: 368.5815575 V |
| Voltage for Gain 150: |
T = +20 °C: 413.6472535 V T = -25 °C: 376.5316328 V |
| Voltage for Gain 200: |
T = +20 °C: 418.0887354 V T = -25 °C: 380.9352818 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.281621009 V-1 T = -25 °C: 4.353538942 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.084935729 V-1 T = -25 °C: 9.25650676 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.00301574 V-1 T = -25 °C: 14.3642082 V-1 |
| Break-through voltage: |
T = +20 °C: 434.0532806 V T = -25 °C: 396.9265994 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
