Show Hamamatsu Avalanche Photo Diode 1303013737
This is all the information about APD 1303013737. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1303013737 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
411 V |
| Dark current: |
8.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
336 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10694 |
| |
|
| Shipment: |
|
| Grid number: |
296 |
| Position in grid: |
1 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.5154101 V T = -25 °C: 374.6816327 V |
| Voltage for Gain 150: |
T = +20 °C: 419.4347903 V T = -25 °C: 382.5556683 V |
| Voltage for Gain 200: |
T = +20 °C: 423.8196219 V T = -25 °C: 386.9140534 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.393039557 V-1 T = -25 °C: 4.37825047 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.542709132 V-1 T = -25 °C: 8.476202593 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.80003 V-1 T = -25 °C: 14.62788211 V-1 |
| Break-through voltage: |
T = +20 °C: 439.1572881 V T = -25 °C: 402.7341557 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
