Show Hamamatsu Avalanche Photo Diode 1302013709
This is all the information about APD 1302013709. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1302013709 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
410.9 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
336 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10694 |
| |
|
| Shipment: |
|
| Grid number: |
294 |
| Position in grid: |
13 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.9410607 V T = -25 °C: 373.8738288 V |
| Voltage for Gain 150: |
T = +20 °C: 418.9426577 V T = -25 °C: 381.809351 V |
| Voltage for Gain 200: |
T = +20 °C: 423.3940032 V T = -25 °C: 386.2269909 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.509252126 V-1 T = -25 °C: 4.591083475 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.852234594 V-1 T = -25 °C: 8.997256554 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.34482452 V-1 T = -25 °C: 13.91404641 V-1 |
| Break-through voltage: |
T = +20 °C: 439.1352641 V T = -25 °C: 402.3169113 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
