Show Hamamatsu Avalanche Photo Diode 1302013684
This is all the information about APD 1302013684. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1302013684 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
448 V |
Voltage for Gain 100 (T=+25°C): |
419.5 V |
Dark current: |
7.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
36 |
EP1 batch: |
202 |
EP1 batch after irradiation: |
10434 |
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Shipment: |
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Grid number: |
293 |
Position in grid: |
12 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 420.2313476 V T = -25 °C: 383.6818267 V |
Voltage for Gain 150: |
T = +20 °C: 428.1494423 V T = -25 °C: 391.5404568 V |
Voltage for Gain 200: |
T = +20 °C: 432.552441 V T = -25 °C: 395.8851921 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.473865203 V-1 T = -25 °C: 4.3753381 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.799961716 V-1 T = -25 °C: 8.530903047 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.35353417 V-1 T = -25 °C: 14.8507854 V-1 |
Break-through voltage: |
T = +20 °C: 439.965838 V T = -25 °C: 411.0641078 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history