Show Hamamatsu Avalanche Photo Diode 1302013672
This is all the information about APD 1302013672. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1302013672 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B07 |
Break-through voltage: |
444 V |
Voltage for Gain 100 (T=+25°C): |
415.8 V |
Dark current: |
6.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
24 |
EP1 batch: |
202 |
EP1 batch after irradiation: |
10434 |
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Shipment: |
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Grid number: |
293 |
Position in grid: |
0 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.3425752 V T = -25 °C: 379.7948318 V |
Voltage for Gain 150: |
T = +20 °C: 424.3075171 V T = -25 °C: 387.690723 V |
Voltage for Gain 200: |
T = +20 °C: 428.7252326 V T = -25 °C: 392.062102 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.421681638 V-1 T = -25 °C: 4.651062979 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.647401806 V-1 T = -25 °C: 9.298511652 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.02182205 V-1 T = -25 °C: 14.4924825 V-1 |
Break-through voltage: |
T = +20 °C: 440.0014976 V T = -25 °C: 407.6242231 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history