Show Hamamatsu Avalanche Photo Diode 1302013641
This is all the information about APD 1302013641. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1302013641 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E03 |
Break-through voltage: |
443 V |
Voltage for Gain 100 (T=+25°C): |
414.5 V |
Dark current: |
7.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10652 |
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Shipment: |
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Grid number: |
291 |
Position in grid: |
17 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
414.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 415.017493 V T = -25 °C: 377.995186 V |
Voltage for Gain 150: |
T = +20 °C: 423.0550586 V T = -25 °C: 385.913549 V |
Voltage for Gain 200: |
T = +20 °C: 427.5265666 V T = -25 °C: 390.342141 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.485286454 V-1 T = -25 °C: 4.593259541 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.751149052 V-1 T = -25 °C: 8.983413751 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19985875 V-1 T = -25 °C: 13.8947661 V-1 |
Break-through voltage: |
T = +20 °C: 439.994365 V T = -25 °C: 406.2066993 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history