Show Hamamatsu Avalanche Photo Diode 1302013639
This is all the information about APD 1302013639. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1302013639 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F02 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
411.5 V |
Dark current: |
7.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10652 |
|
|
Shipment: |
|
Grid number: |
291 |
Position in grid: |
15 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
411.5 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 412.4889228 V T = -25 °C: 376.2910515 V |
Voltage for Gain 150: |
T = +20 °C: 420.5796883 V T = -25 °C: 384.3008383 V |
Voltage for Gain 200: |
T = +20 °C: 425.0565357 V T = -25 °C: 388.7948906 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.297614871 V-1 T = -25 °C: 4.354242492 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.095982049 V-1 T = -25 °C: 8.446698904 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09214668 V-1 T = -25 °C: 14.57891405 V-1 |
Break-through voltage: |
T = +20 °C: 436.5837284 V T = -25 °C: 402.7957346 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history