Show Hamamatsu Avalanche Photo Diode 1302013637
This is all the information about APD 1302013637. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1302013637 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
446 V |
| Voltage for Gain 100 (T=+25°C): |
416.5 V |
| Dark current: |
5.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
357 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10543 |
| |
|
| Shipment: |
|
| Grid number: |
291 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
416.5 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.6416849 V T = -25 °C: 379.6108566 V |
| Voltage for Gain 150: |
T = +20 °C: 424.6680192 V T = -25 °C: 387.5798121 V |
| Voltage for Gain 200: |
T = +20 °C: 429.1256609 V T = -25 °C: 392.0187708 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.33343863 V-1 T = -25 °C: 4.383131325 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.075862161 V-1 T = -25 °C: 8.317566654 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.02390454 V-1 T = -25 °C: 14.26331877 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0109903 V T = -25 °C: 408.6276345 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
