Show Hamamatsu Avalanche Photo Diode 1301013635
This is all the information about APD 1301013635. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1301013635 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B04 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
411.1 V |
| Dark current: |
5.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
416 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10652 |
| |
|
| Shipment: |
|
| Grid number: |
291 |
| Position in grid: |
12 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
411.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.6843122 V T = -25 °C: 374.9538394 V |
| Voltage for Gain 150: |
T = +20 °C: 419.7252208 V T = -25 °C: 382.881643 V |
| Voltage for Gain 200: |
T = +20 °C: 424.0956108 V T = -25 °C: 387.2434894 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.753542798 V-1 T = -25 °C: 4.073640133 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.510627755 V-1 T = -25 °C: 9.212292581 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28593432 V-1 T = -25 °C: 13.61351695 V-1 |
| Break-through voltage: |
T = +20 °C: 438.5535965 V T = -25 °C: 403.2159881 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
