Show Hamamatsu Avalanche Photo Diode 1301013632
This is all the information about APD 1301013632. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1301013632 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
405.7 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
357 |
| Position in Box: |
37 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10543 |
| |
|
| Shipment: |
|
| Grid number: |
291 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
405.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.3417421 V T = -25 °C: 369.0933408 V |
| Voltage for Gain 150: |
T = +20 °C: 414.3041177 V T = -25 °C: 376.9935776 V |
| Voltage for Gain 200: |
T = +20 °C: 418.7128237 V T = -25 °C: 381.3929536 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.397035756 V-1 T = -25 °C: 4.498501469 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.526173575 V-1 T = -25 °C: 8.87977086 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.72988597 V-1 T = -25 °C: 15.4023717 V-1 |
| Break-through voltage: |
T = +20 °C: 434.4744723 V T = -25 °C: 397.6185059 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
