Show Hamamatsu Avalanche Photo Diode 1301013602
This is all the information about APD 1301013602. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1301013602 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E15 |
Break-through voltage: |
446 V |
Voltage for Gain 100 (T=+25°C): |
417.6 V |
Dark current: |
9.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
267 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10691 |
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Shipment: |
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Grid number: |
290 |
Position in grid: |
3 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 418.1946569 V T = -25 °C: 380.9417575 V |
Voltage for Gain 150: |
T = +20 °C: 426.1620017 V T = -25 °C: 388.87218 V |
Voltage for Gain 200: |
T = +20 °C: 430.585759 V T = -25 °C: 393.279373 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.463206792 V-1 T = -25 °C: 4.568787797 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.739365817 V-1 T = -25 °C: 8.962983244 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.12829678 V-1 T = -25 °C: 13.91318903 V-1 |
Break-through voltage: |
T = +20 °C: 444.9317254 V T = -25 °C: 408.6346215 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history